2SC50260RL

Single Bipolar Transistors Overview

The Panasonic 2SC5026 is a silicon NPN epitaxial planar transistor designed for low-frequency output amplification. It features an 80 V collector-emitter voltage and a continuous collector current of 1 A, with a peak rating of 1.5 A. The device offers a minimum forward current transfer ratio (hFE) of 60 at 500 mA and a maximum collector-emitter saturation voltage of 0.3 V under heavy load conditions. Packaged in the MiniP3-F1 format, it supports automatic insertion via tape or magazine packing.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient power handling
• High collector-emitter voltage rating suitable for robust circuit designs
• Mini Power type package enabling equipment downsizing and automated assembly

Single Bipolar Transistors Applications

• Low-frequency output amplification circuits
• General electronic equipment
• Office equipment
• Communications equipment
• Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized channels due to potential lifecycle variations. Confirm the specific manufacturing lot against official Panasonic records to ensure compliance with RoHS directives. Review the latest product standards before final integration, as specifications may be subject to change without notice. Ensure proper thermal management during installation to maintain junction temperature limits.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high-voltage NPN switching with moderate current capabilities. Consider its complementary counterpart, the 2SA1890, for push-pull configurations. Evaluate the MiniP3-F1 package dimensions against available PCB real estate constraints. Verify that the required hFE rank aligns with the specific gain requirements of the target amplifier stage.

Single Bipolar Transistors Part Context

This transistor belongs to the Panasonic discrete semiconductor family, specifically engineered for general-purpose low-frequency amplification tasks. It utilizes a silicon NPN epitaxial planar structure housed in a compact MiniP3-F1 package. The design prioritizes reduced equipment size while maintaining reliable performance in standard electronic environments.

Single Bipolar Transistors Replacement Considerations

The 2SA1890 is documented as the complementary PNP transistor for use in paired configurations.