2SC5060TV2M

Single Bipolar Transistors Overview

The ROHM 2SC5060 is a power transistor rated for 90V collector-emitter voltage and 3A continuous collector current. It features an integrated zener diode between the collector and base to protect against reverse power surges from inductive loads. The device utilizes a Darlington connection for high DC current gain and includes a built-in base-to-emitter resistor. Electrical characteristics include a minimum hFE of 100 at IC=1mA, a transition frequency (fT) up to 2500MHz, and a collector power dissipation of 1W on a standard PCB.

Single Bipolar Transistors Feature Summary

• Built-in zener diode between collector and base provides strong protection against reverse power surges caused by inductive loads.
• Darlington configuration ensures high DC current transfer ratio for efficient switching and amplification.
• Integrated base-to-emitter resistor simplifies circuit design and improves stability.

Single Bipolar Transistors Applications

• Inductive load switching circuits requiring surge protection
• High-speed switching applications due to high transition frequency
• Amplifier stages benefiting from high DC current gain

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix (e.g., TV2M) matches the required packaging quantity and tape-and-reel specifications. Confirm that the component meets the necessary automotive or industrial qualification standards if applicable, as this is a general-purpose power transistor. Ensure the thermal management design accounts for the 1W power dissipation limit under actual operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when a single-device solution combining a Darlington transistor with overvoltage protection is required. It is suitable for driving inductive loads where reverse EMF suppression is critical without external components. Consider the SOT-89 package size and thermal resistance when designing the PCB layout for adequate heat dissipation.

Single Bipolar Transistors Part Context

The 2SC5060 belongs to ROHM's lineup of integrated power transistors designed for robustness in switching applications. Unlike standard transistors, it combines the functionality of a Darlington pair with protective diodes, reducing component count and board space. This integration makes it distinct from discrete solutions that would require separate zener diodes and resistors for equivalent protection.

Single Bipolar Transistors Replacement Considerations

Check datasheets for alternative Darlington transistors with similar voltage ratings (≥90V) and integrated protection features. Verify pinout compatibility and thermal performance metrics before substitution.

Single Bipolar Transistors FAQ

What is the function of the internal zener diode?

It protects the transistor from reverse power surges generated by inductive loads connected to the collector.

What is the typical DC current gain (hFE)?

The minimum hFE is 100 at IC=1mA, with a maximum of 2500.

How does the Darlington connection benefit this device?

It provides a high DC current transfer ratio, allowing the transistor to handle larger collector currents with smaller base drive currents.