2SC5065-O(TE85L,F)

Overview

The 2SC5065-O(TE85L,F) is an NPN RF transistor manufactured by Toshiba Semiconductor and Storage. It operates with a collector-emitter voltage of 12V and supports frequencies up to 7GHz. The device features a surface-mount USM package suitable for high-frequency applications. Maximum power dissipation is rated at 100mW, with a maximum collector current of 30mA. This component is designed for radio frequency signal processing in compact electronic systems.

Feature Summary

• NPN bipolar junction transistor architecture optimized for radio frequency operations
• High-speed performance capability supporting frequencies up to 7GHz
• Compact surface-mount USM package design for automated assembly

Applications

• RF signal amplification circuits
• Wireless communication transceivers
• Radio frequency oscillator stages

Procurement Notes

Verify the specific suffix designation when sourcing, as the O variant may be obsolete. Confirm RoHS compliance status through official documentation. Check for authorized distribution channels to ensure authenticity. Validate package marking against datasheet specifications. Request batch traceability information for quality assurance purposes prior to procurement.

Selection Notes

Select this component for high-frequency applications requiring low power consumption. Ensure the 12V voltage rating aligns with circuit requirements. Consider the 100mW power dissipation limit for thermal management. Verify compatibility with existing PCB layout constraints due to the USM package size. Evaluate alternative models if higher current handling is necessary.

Part Context

This part belongs to Toshiba's RF transistor portfolio, specifically engineered for high-frequency analog and digital switching applications. The 2SC5065 series provides reliable performance in consumer electronics and communication devices. Toshiba Semiconductor and Storage continues to support legacy components for long-term production runs.