2SC5071

Single Bipolar Transistors Overview

The Sanken 2SC5071 is a silicon NPN triple diffused planar transistor designed for high voltage and high speed switching applications. It features a collector-emitter breakdown voltage of 400V and a continuous collector current rating of 12A, with a peak pulse current capability of 24A. The device supports a maximum power dissipation of 100W at a case temperature of 25°C. Key electrical characteristics include a minimum DC current gain (hFE) of 10 at IC=25mA and VCE=4V, and a typical transition frequency (fT) of 10MHz. The component operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Triple diffused planar construction optimized for high voltage and high speed switching performance
• Capable of handling high continuous and pulse collector currents suitable for robust power control
• Designed for efficient thermal management with defined derating curves for ambient temperature operation

Single Bipolar Transistors Applications

• Switching regulators
• General purpose switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet version and revision date when sourcing components, as specifications may be subject to change. Confirm that the package dimensions match the MT-100 (TO-3P) outline provided in the official documentation. Ensure that thermal interface materials and mounting hardware are compatible with the specified maximum power dissipation requirements under your intended operating conditions.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage blocking capabilities combined with moderate switching speeds. Evaluate the safe operating area (SOA) curves to ensure the device remains within limits during transient events. Consider the thermal resistance characteristics when designing heatsinking solutions, as power dissipation decreases significantly as ambient temperature rises above 25°C.

Single Bipolar Transistors Part Context

This device belongs to Sanken's lineup of silicon NPN transistors engineered for power electronics. It utilizes triple diffused planar technology to achieve reliable performance in demanding environments. The component is housed in an MT-100 (TO-3P) package, which facilitates direct mounting to heat sinks for effective thermal regulation during high-current operation.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent high-voltage NPN transistors. Verify that any alternative part meets or exceeds the 400V V(BR)CEO and 12A IC ratings. Ensure pinout compatibility with the MT-100 package configuration before implementation.