2SC5085-O(TE85L,F)

$0.23

Description：RF TRANS NPN 12V 7GHZ SC-70
Series：-

SKU:548209e0ffcf Category: Bipolar RF Transistors Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 7GHZ SC-70
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：7GHz
Noise Figure (dB Typ @ f)：1dB @ 500MHz
Gain：-
Power - Max：100mW
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 20mA, 10V
Current - Collector (Ic) (Max)：80mA
Operating Temperature：125°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70
Grade：-
Qualification：-

Download product information

2SC5085-O(TE85L,F)

Overview

The 2SC5085-O(TE85L,F) is an N-channel RF bipolar transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector current of 80 mA, a breakdown voltage of 12 V, and operates at frequencies up to 7 GHz. The device is designed for surface mount applications in the SC-70 package with a power dissipation rating of 100 mW.

Feature Summary

High-frequency operation capability up to 7 GHz
Low noise amplifier suitability for VHF/UHF bands
Compact surface-mount packaging for space-constrained designs

Applications

VHF/UHF band low noise amplifiers
RF signal processing circuits
High-frequency switching applications

Procurement Notes

Verify component authenticity through authorized distributors. Confirm RoHS compliance status prior to integration. Ensure storage conditions maintain moisture sensitivity levels. Validate pinout compatibility with existing PCB footprints. Review datasheet revisions for updated electrical characteristics before final design approval.

Selection Notes

Evaluate thermal management requirements given the 100 mW power dissipation limit. Consider frequency response needs against the 7 GHz operational ceiling. Assess package size constraints relative to the SC-70 footprint. Compare noise figures with alternative RF transistors for optimal signal integrity in sensitive receiver chains.

Part Context

This component belongs to Toshiba's portfolio of high-performance RF bipolar transistors. It complements other small-signal devices in the company's discrete semiconductor lineup. The TE85L suffix indicates specific tape-and-reel packaging configuration for automated assembly processes.