2SC5085-Y(TE85L,F)

$0.37

Description：RF TRANS NPN 12V 7GHZ SC-70
Series：-

SKU:1abde1833a2d Category: Bipolar RF Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 7GHZ SC-70
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：7GHz
Noise Figure (dB Typ @ f)：1.1dB @ 1GHz
Gain：11dB ~ 16.5dB
Power - Max：100mW
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 20mA, 10V
Current - Collector (Ic) (Max)：80mA
Operating Temperature：125°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70
Grade：-
Qualification：-

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2SC5085-Y(TE85L,F)

Overview

The Toshiba Semiconductor and Storage 2SC5085-Y(TE85L,F) is a silicon NPN epitaxial planar bipolar junction transistor designed for VHF to UHF band low noise amplifier applications. It features a surface-mount SC-70 (SOT-346) package, suitable for compact electronic designs. The device operates with a collector-emitter voltage of 10V and supports a continuous collector current of 60mA. Key electrical characteristics include a maximum power dissipation of 50mW and a transition frequency up to 2GHz. The component integrates high gain performance with low noise figures, making it appropriate for RF signal processing in communication systems.

Feature Summary

Optimized for low noise amplification in VHF and UHF frequency bands
Utilizes silicon epitaxial planar technology for stable RF performance
Compact surface-mount packaging facilitates automated assembly

Applications

VHF/UHF low noise amplifier stages
RF signal conditioning circuits
Wireless communication transceivers

Procurement Notes

Verify the specific suffix TE85L,F against official Toshiba documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SMT reflow profiles for the SC-70 package. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before integration into production.

Selection Notes

Select this component when designing RF front-ends requiring low noise figure at VHF/UHF frequencies. Compare transition frequency and noise parameters against alternative small-signal transistors if higher current handling or different packaging is required. Confirm that the 50mW power dissipation limit aligns with the thermal management capabilities of the target PCB layout.

Part Context

This part belongs to Toshiba's lineup of silicon NPN epitaxial planar transistors intended for radio frequency applications. The 2SC5085 series specifically targets low noise amplifier uses in the VHF and UHF spectrum. The TE85L,F suffix indicates a specific taping configuration for automated surface-mount manufacturing processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba's official replacement guide or distributor cross-reference tools for verified equivalents.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.