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The 2SC5088-O(TE85L,F) is an NPN bipolar RF transistor manufactured by Toshiba Semiconductor and Storage. It features a collector-emitter breakdown voltage of 12V, a continuous collector current of 80mA, and a maximum power dissipation of 100mW. Designed for high-frequency applications, the device supports operation up to 7GHz. The component utilizes a surface-mount USQ package (SC-82A). This specific part number is currently listed as obsolete and is no longer in production.
This component is officially marked as obsolete by the manufacturer. Verify availability through authorized distributors for existing stock or consider approved replacement alternatives. Ensure compatibility with existing PCB footprints if substituting. Confirm lead times and authenticity when sourcing remaining inventory from third-party suppliers.
Select this component only for legacy designs requiring its specific 12V rating and 7GHz performance envelope. Evaluate thermal management requirements due to the 100mW power limit. Compare against newer generation RF transistors that may offer improved noise figures or higher breakdown voltages while maintaining similar package dimensions.
The 2SC5088 series represents Toshiba's lineup of silicon NPN RF transistors designed for compact wireless applications. The TE85L suffix indicates a specific tape-and-reel packaging configuration. These devices are engineered for stability and linearity in small-signal amplification tasks within consumer electronics and industrial RF systems.
Check for cross-reference parts with matching 12V C-E breakdown and 7GHz fT specifications. Verify pinout compatibility with the SC-82A footprint before substitution.