2SC5095-R(TE85L,F)

Overview

The 2SC5095-R(TE85L,F) is an NPN silicon RF small signal transistor designed for ultra-high frequency applications. It utilizes a SC-70 surface-mount package with three pins. Key electrical parameters include a maximum collector-emitter voltage of 10 V, a maximum power dissipation of 0.1 W, and a minimum DC current gain (hFE) of 50. The device features low noise characteristics and a maximum collector capacitance of 0.85 pF, supporting operation up to 125°C.

Feature Summary

• Optimized for ultra-high frequency band operations
• Low noise performance suitable for sensitive RF circuits
• Compact SC-70 surface-mount form factor

Applications

• UHF band amplification stages
• RF signal processing circuits
• Low noise amplifier designs

Procurement Notes

Verify the specific suffix TE85L,F against official Toshiba Semiconductor and Storage documentation to confirm packaging and tape specifications. Ensure component authenticity through authorized distribution channels. Cross-reference datasheet revisions to confirm parameter consistency before integration into final designs.

Selection Notes

Select this component for applications requiring NPN configuration in ultra-high frequency ranges. Consider the 0.85 pF collector capacitance and 10 V voltage rating when designing matching networks. Verify thermal management requirements given the 0.1 W power dissipation limit in the SC-70 package.

Part Context

This part belongs to Toshiba's discrete semiconductor transistor portfolio, specifically within the RF small signal category. The 2SC series designation indicates a standard NPN bipolar junction transistor configuration optimized for high-frequency performance rather than general-purpose switching or power amplification tasks.

Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements must match the SC-70 package, NPN polarity, UHF frequency range, and comparable hFE and capacitance values to ensure circuit compatibility.