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The 2SC5096-R,LF is an NPN bipolar RF small signal transistor manufactured by Toshiba Semiconductor and Storage. Designed for ultra-high frequency applications, it operates with a maximum collector-emitter voltage of 10V and a maximum collector current of 15mA. The device features a transition frequency of 10GHz and delivers a power gain of 1.4dB at 1GHz. It exhibits a noise figure of 1.4dB at 1GHz and has a maximum power dissipation of 100mW. Packaged in the SC-75 (SOT-416) surface-mount format, this component is optimized for low-noise performance in UHF band circuits.
Verify the specific ordering code suffix to ensure compliance with RoHS standards and lead-free requirements. Confirm that the SC-75 package variant matches the intended PCB footprint. Cross-reference the manufacturer's latest datasheet to validate electrical parameters against current production batches. Ensure storage conditions adhere to moisture sensitivity levels specified for surface-mount devices.
Select this component when a low-noise NPN transistor is required for frequencies up to 10GHz. The 1.4dB noise figure makes it suitable for sensitive receiver inputs. Consider the 100mW power dissipation limit for thermal management in dense layouts. Compare against alternative SOT-416 packages if pin compatibility is critical for existing board designs.
This part belongs to Toshiba’s discrete semiconductor portfolio focused on RF small-signal applications. It complements other UHF transistors like the 2SC5095 series, offering similar form factors with specific noise and gain characteristics tailored for high-frequency amplification tasks in consumer and industrial electronics.
Public confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence with other NPN RF transistors in the SOT-416 package by comparing Vceo, Ic(max), fT, and noise figures before substitution.