Single Bipolar Transistors 2SC51210P product image

2SC51210P

  • Description:TRANS NPN 400V 0.07A TO-126B-A1
  • Series:-

SKU:678d37db91ee Category: Brand:

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2SC51210P is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 400V 0.07A TO-126B-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC51210P

  • Description:TRANS NPN 400V 0.07A TO-126B-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):70 mA
  • Voltage - Collector Emitter Breakdown (Max):400 V
  • Vce Saturation (Max) @ Ib, Ic:1.2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 10V
  • Power - Max:1.2 W
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126B-A1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC51210P

2SC51210P

Single Bipolar Transistors Overview

The Panasonic 2SC51210P is a silicon NPN triple diffusion planar transistor designed for general amplification. It features a collector-emitter voltage of 400 V and a collector current rating of 70 mA. The device operates with a transition frequency up to 80 MHz and exhibits low collector output capacitance of 8 pF. Packaged in a TO-126B-A1 format, it supports a junction temperature of 150°C and complies with the RoHS Directive.

Single Bipolar Transistors Feature Summary

  • High collector-base and collector-emitter voltage ratings
  • Small collector output capacitance for high-frequency performance
  • TO-126B package allows direct heat sink installation without insulation plates

Single Bipolar Transistors Applications

  • General amplification circuits
  • Office equipment
  • Communications equipment
  • Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific lifecycle status before procurement, as this component may be classified under maintenance or discontinued stages. Consult official Panasonic semiconductor channels for the most current Product Standards and availability information prior to final design commitment.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high voltage isolation and low output capacitance within a compact form factor. Ensure thermal management accommodates the 1.2 W power dissipation limit at ambient temperatures above 25°C. Verify that the required collector current remains within the 70 mA continuous rating.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5121 series of silicon NPN transistors manufactured by Panasonic Electronic Components. The 'P' suffix indicates the specific TO-126B-A1 packaging configuration. The device utilizes triple diffusion planar technology to achieve its electrical characteristics suitable for standard electronic equipment.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Users should consult Panasonic sales staff for potential alternatives if this component is discontinued.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 400 V when the base is open.

Does the package require an insulation plate for heat sink mounting?

No, the TO-126B package is designed to be installed directly onto a heat sink without requiring an additional insulation plate.

What is the typical forward current transfer ratio?

The typical forward current transfer ratio (hFE) is 100 when measured at VCE = 10 V and IC = 5 mA.

2SC51210P2SC51210P

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