2SC5171,ONKQ(J

Single Bipolar Transistors Overview

The Toshiba 2SC5171 is a silicon NPN epitaxial planar transistor designed for power amplifier and driver stage applications. It features a high transition frequency of 200 MHz and is electrically complementary to the 2SA1930 PNP device. The component supports a maximum collector current of 2 A and withstands collector-emitter voltages up to 180 V. With a collector power dissipation rating of 20 W at 25°C case temperature, it operates within a junction temperature range of -55°C to +150°C. The device is housed in a TO-220NIS package.

Single Bipolar Transistors Feature Summary

• High transition frequency capability for efficient signal amplification
• Complementary pairing with the 2SA1930 PNP transistor
• Robust thermal performance suitable for power amplifier stages

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm exact marking and packaging variations. Confirm RoHS compliance status directly with the manufacturer or authorized distributor, as regulatory status can vary by production lot. Ensure the selected variant matches the required lead-free finish specifications for your assembly process.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN power transistor with a 200 MHz transition frequency. Ensure the design accommodates the 20 W power dissipation limit at the expected case temperature. Verify that the load requirements do not exceed the 2 A continuous collector current rating. Consider the complementary 2SA1930 if a push-pull configuration is necessary for the application.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SC series of silicon NPN epitaxial transistors. It is specifically engineered for audio and RF power amplification tasks where high-speed switching and gain are critical. The device utilizes a planar structure to ensure stable electrical characteristics across the specified operating temperature range.

Single Bipolar Transistors Replacement Considerations

The 2SA1930 is documented as the complementary PNP counterpart for paired operation. No other direct substitute part numbers are confirmed in the provided datasheet.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SC5171?

The typical transition frequency (fT) is 200 MHz.

Is the 2SC5171 compatible with the 2SA1930?

Yes, the datasheet explicitly states that the 2SC5171 is complementary to the 2SA1930.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 180 V.