2SC5171(ONK,Q,M)

Single Bipolar Transistors Overview

The Toshiba 2SC5171 is a silicon NPN epitaxial planar bipolar junction transistor housed in a TO-220NIS package. It features a collector-emitter breakdown voltage of 180 V and a maximum continuous collector current of 2 A. The device exhibits a typical transition frequency of 200 MHz and a collector power dissipation rating of 20 W at 25°C case temperature. Electrical characteristics include a minimum DC current gain of 100 at 100 mA and 50 at 1 A, with a maximum collector cut-off current of 5 µA.

Single Bipolar Transistors Feature Summary

• High transition frequency capability for RF and audio driver applications
• Complementary pairing with the 2SA1930 PNP transistor
• Robust thermal performance within a standard through-hole leaded package

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify component authenticity by inspecting the marking code on the package surface, which should display the part number abbreviation and lot identification. Confirm RoHS compliance status directly with the manufacturer or authorized distributor, as regulatory adherence varies by production batch. Ensure the specific ordering suffix matches the required packaging format before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-speed switching or linear amplification near the 200 MHz boundary. Evaluate the safe operating area curves to ensure operation remains within thermal limits under varying load conditions. Consider the complementary 2SA1930 for push-pull configurations to maintain balanced performance characteristics across the signal cycle.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's lineup of general-purpose silicon NPN transistors designed for medium-power applications. It serves as a specialized alternative for audio output stages and intermediate frequency amplification where high-frequency response is critical. The component utilizes an epitaxial construction to optimize speed and breakdown voltage ratios.

Single Bipolar Transistors Replacement Considerations

The 2SA1930 is documented as the complementary PNP counterpart for matched pairs. Verify pinout compatibility and thermal resistance specifications when substituting with other TO-220 packages from different manufacturers.