2SC5198-O(S1,E

Description：TRANS NPN 140V 10A TO-3P
Series：-

SKU:1778ac6ae0f0 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC5198-O(S1,E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 140V 10A TO-3P. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5198-O(S1,E

Description：TRANS NPN 140V 10A TO-3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
Transistor Type：NPN
Current - Collector (Ic) (Max)：10:00 AM
Voltage - Collector Emitter Breakdown (Max)：140 V
Vce Saturation (Max) @ Ib, Ic：2V @ 700mA, 7A
Current - Collector Cutoff (Max)：5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：55 @ 1A, 5V
Power - Max：100 W
Frequency - Transition：30MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P(N)
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC5198-O(S1,E

2SC5198-O(S1,E

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC5198-O(S1,E is a silicon NPN triple diffused type power transistor designed for high-voltage audio amplifier applications. It features a minimum collector-emitter breakdown voltage of 140 V, a maximum continuous collector current of 10 A, and a collector power dissipation rating of 100 W at 25°C case temperature. The device has a transition frequency of 30 MHz and operates with a junction temperature up to 150 °C. It is packaged in the JEDEC 2-16C1A format.

Single Bipolar Transistors Feature Summary

Triple diffused silicon NPN construction
High breakdown voltage capability
Complementary pairing with 2SA1941

Single Bipolar Transistors Applications

70-W high fidelity audio amplifier output stages

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the exact variant required. Confirm RoHS compatibility status directly with Toshiba sales representatives, as environmental compliance details are not explicitly defined within the standard datasheet text. Ensure the component meets all safety standards before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component when designing high-fidelity audio amplifiers requiring a minimum 140 V breakdown voltage. Verify that the thermal management system can maintain the case temperature at or below 25°C to achieve the full 100 W power dissipation rating. Ensure the design accommodates the specific DC current gain ranges provided in the electrical characteristics table.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SC5198 series of power transistors. It is specifically engineered for use in high-fidelity audio amplifier output stages. The device is designed to operate complementarily with the 2SA1941 PNP transistor, forming matched pairs for push-pull amplifier configurations.