Single Bipolar Transistors 2SC5200RTU product image

2SC5200RTU

  • Description:TRANS NPN 250V 17A TO-264-3
  • Series:-

SKU:c2c5cf26a3b6 Category: Brand:

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2SC5200RTU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 250V 17A TO-264-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5200RTU

  • Description:TRANS NPN 250V 17A TO-264-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):17 A
  • Voltage - Collector Emitter Breakdown (Max):250 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 800mA, 8A
  • Current - Collector Cutoff (Max):5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:55 @ 1A, 5V
  • Power - Max:150 W
  • Frequency - Transition:30MHz
  • Operating Temperature:-50°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-264-3, TO-264AA
  • Supplier Device Package:TO-264-3

Single Bipolar Transistors datasheet and documents for 2SC5200RTU

2SC5200RTU

Single Bipolar Transistors Overview

The 2SC5200RTU is an NPN epitaxial silicon transistor manufactured by ON Semiconductor, formerly Fairchild. It features a TO-264 package with three pins and supports through-hole mounting. Key electrical ratings include a maximum collector current of 17A, a collector-emitter breakdown voltage (BVCEO) of 250V, and a total power dissipation of 150W at 25°C case temperature. The device has a transition frequency of 30MHz and a junction-to-case thermal resistance of 0.83°C/W. The 'R' suffix indicates an hFE classification range of 55 to 160.

Single Bipolar Transistors Feature Summary

  • High current capability supporting up to 17A collector current
  • Wide safe operating area for reliable operation under varying conditions
  • Excellent gain linearity designed to minimize total harmonic distortion
  • Complementary pairing available with the 2SA1943 PNP transistor

Single Bipolar Transistors Applications

  • High-fidelity audio output amplifiers
  • General purpose power amplifier circuits

Single Bipolar Transistors Procurement Notes

Verify the specific hFE grade required for your application, as the RTU suffix denotes the R grade classification. Confirm that the TO-264 package dimensions match your PCB footprint requirements. Ensure adequate heatsinking is provided to maintain the case temperature within limits for the specified 150W power dissipation rating.

Single Bipolar Transistors Selection Notes

Select this component when high voltage handling and substantial current drive are necessary in a single-ended configuration. Consider the complementary 2SA1943 if a push-pull topology is required. Evaluate the thermal management strategy carefully due to the high power dissipation capabilities and low thermal resistance characteristics of the TO-264 package.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5200O series of high-power NPN transistors. It is functionally equivalent to the FJL4315RTU. Alternative packages in the same performance family include the TO-3P (2SC5242), TO-220 (FJP5200), and TO-220F (FJPF5200), offering different power dissipation profiles based on the physical housing size.

Single Bipolar Transistors Replacement Considerations

The FJL4315RTU is a direct equivalent part number for this component. For complementary designs, the 2SA1943 is the designated matching PNP transistor.

2SC5200RTU2SC5200RTU

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