2SC5201,F(J

Description：TRANS NPN 600V 0.05A TO-92MOD
Series：-

SKU:aed826e40974 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

2SC5201,F(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 600V 0.05A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5201,F(J

Description：TRANS NPN 600V 0.05A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：600 V
Vce Saturation (Max) @ Ib, Ic：1V @ 500mA, 20mA
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 20mA, 5V
Power - Max：900 mW
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC5201,F(J

2SC5201,F(J

Single Bipolar Transistors Overview

The Toshiba 2SC5201 is a silicon NPN triple diffused mesa type transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 600 V and a maximum DC collector current of 50 mA. The device exhibits a low saturation voltage of 1.0 V (max) at IC = 20 mA and IB = 0.5 mA. It operates within a junction temperature range up to 150 °C and dissipates up to 900 mW of power. The component is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

Triple diffused mesa structure optimized for high-voltage switching
High breakdown voltage capability of 600 V
Low collector-emitter saturation voltage for efficient switching

Single Bipolar Transistors Applications

General electronics applications
Computers and personal equipment
Office equipment and measuring equipment
Industrial robots and home electronics appliances

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status with the manufacturer, as markings indicate specific environmental compliance. Confirm the exact ordering suffix matches the required packaging or lead-free specifications. Review the latest Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring high voltage isolation and low saturation losses. Ensure the design accounts for the 900 mW power dissipation limit and derating requirements at elevated temperatures. Verify that the 50 mA continuous collector current meets the load requirements without exceeding absolute maximum ratings.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of bipolar small-signal transistors utilizing triple diffused mesa technology. It is engineered specifically for high-voltage switching tasks where standard transistors may fail due to voltage limitations. The TO-92MOD package provides a compact form factor suitable for various general electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinouts, voltage ratings, and thermal characteristics against the original datasheet.