2SC5201(TE6,F,M)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC5201(TE6,F,M) is a silicon NPN triple diffused mesa type transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage (VCEO) of 600 V and a maximum DC collector current (IC) of 50 mA. The device exhibits a low saturation voltage (VCE(sat)) of 1.0 V max at IC = 20 mA and IB = 0.5 mA. It operates within a junction temperature range of -55°C to 150°C, with a collector power dissipation of 900 mW.

Single Bipolar Transistors Feature Summary

• Triple diffused mesa structure optimized for high-voltage switching performance
• High breakdown voltage capability up to 600 V for robust operation
• Low collector-emitter saturation voltage to minimize power loss during conduction

Single Bipolar Transistors Applications

• General electronics applications including computers and office equipment
• Industrial robots and measuring equipment
• Home electronics appliances

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by contacting the Toshiba sales representative, as markings indicate potential variations between standard and RoHS compliant versions. Confirm that the specific ordering suffix matches the required environmental compliance for your project. Ensure designs account for derating concepts outlined in the Toshiba Semiconductor Reliability Handbook to maintain product reliability under heavy loads or significant temperature changes.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring high-voltage handling capabilities combined with low saturation characteristics. The TO-92MOD package suits through-hole mounting requirements for general-purpose electronics. Evaluate the absolute maximum ratings carefully, particularly the 900 mW power dissipation limit, to ensure appropriate thermal management solutions are implemented for continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5201 series of NPN transistors manufactured by Toshiba Semiconductor. The device utilizes a triple diffused mesa process technology specifically engineered to enhance switching efficiency and withstand high voltages. It serves as a discrete semiconductor solution for controlling signals and power in various electronic systems where reliable high-voltage switching is essential.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Cross-referencing requires matching critical parameters such as the 600 V breakdown voltage and 50 mA current rating to ensure functional equivalence in existing circuit designs without compromising safety or performance standards.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (VCEO) is 600 V.

What is the typical DC current gain range?

The DC current gain (hFE) ranges from 80 to 300 depending on the collector current conditions.

Is this component suitable for aerospace or medical equipment?

No, the product is not intended for use in equipment requiring extraordinarily high levels of quality and reliability, such as aerospace or medical equipment.