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The onsemi 2SC5226A-4-TL-E is a Pb-free NPN single RF transistor designed for high-frequency applications. It operates with a collector-to-emitter voltage of 10 V and supports a maximum collector current of 70 mA, dissipating up to 150 mW of power. The device features a typical gain-bandwidth product (fT) of 7 GHz at 20 mA. At 1 GHz, it provides a forward transfer gain magnitude squared of 12 dB and a noise figure as low as 1.0 dB. Packaged in the SC-70 / MCP3 surface-mount format, it is suitable for compact RF circuit designs.
Verify component authenticity through authorized channels. Confirm that the specific ordering suffix matches the required hFE rank for the application. Check for RoHS compliance documentation. Ensure storage conditions remain within specified limits to maintain device integrity prior to assembly.
Select this component when a small footprint is required alongside high-frequency performance. Evaluate the DC current gain requirements against the specific rank needed. Consider the thermal dissipation capabilities relative to the ambient operating temperature. Verify impedance matching requirements against the provided S-parameter data.
This part belongs to the 2SC5226A series of NPN RF transistors manufactured by onsemi. It utilizes the MCP3 package variant, which corresponds to the SC-70 physical outline. The series is engineered specifically for radio frequency applications requiring high speed and low noise characteristics in a miniature form factor.
The datasheet identifies the 2SC5226A-5-TL-E as a discontinued alternative within the same series. No other verified public substitute part numbers are documented.