2SC5227A-5-TB-E

$0.43

Description：RF TRANS NPN 10V 7GHZ 3-CP
Series：-

SKU:d839c6ee21cc Category: Bipolar RF Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 10V 7GHZ 3-CP
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：10V
Frequency - Transition：7GHz
Noise Figure (dB Typ @ f)：1dB @ 1GHz
Gain：12dB
Power - Max：200mW
DC Current Gain (hFE) (Min) @ Ic, Vce：135 @ 20mA, 5V
Current - Collector (Ic) (Max)：70mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：3-CP
Grade：-
Qualification：-

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2SC5227A-5-TB-E

Overview

The onsemi 2SC5227A-5-TB-E is an NPN silicon RF bipolar transistor designed for low-noise amplifier applications. It operates in the VHF to UHF frequency bands, with a maximum operating frequency of 7 GHz. The device features a DC collector current rating of 70 mA and a collector-emitter breakdown voltage (VCEO) of 10 V. Packaged in the SC-59 (SOT-23) surface-mount format, it dissipates up to 200 mW of power. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 20 mA and 5 V, and a maximum emitter-base voltage (VEBO) of 2 V. The component supports a maximum junction temperature of +150 °C.

Feature Summary

Optimized for low-noise performance in radio frequency signal chains
Capable of operation across wide VHF to UHF bandwidths
Compact surface-mount footprint suitable for space-constrained PCB layouts

Applications

Low-noise amplification in wireless communication systems
RF front-end modules requiring high-frequency stability
Signal processing circuits in VHF/UHF transceivers

Procurement Notes

Verify the specific suffix -5-TB-E against the manufacturer's latest datasheet to confirm pinout orientation and tape-and-reel specifications. Ensure that the SC-59 package dimensions align with the target PCB land pattern. Confirm RoHS compliance status through official environmental declarations before integration into regulated products.

Selection Notes

Select this component when a small-form-factor NPN transistor is required for frequencies up to 7 GHz. Compare the 70 mA continuous current limit against circuit load requirements. Evaluate the 200 mW power dissipation capability relative to thermal management constraints in the final assembly design.

Part Context

This part belongs to the 2SC5227A series of RF bipolar transistors manufactured by onsemi. It serves as a surface-mount alternative to larger through-hole packages while maintaining similar electrical performance profiles for high-frequency analog applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with any potential replacements by matching the SC-59 package, 7 GHz frequency limit, and 10 V VCEO rating.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.