2SC5242-O(Q)

Single Bipolar Transistors Overview

The Toshiba 2SC5242-O(Q) is a silicon NPN triple diffused type transistor designed for power amplifier applications. It features a high collector breakdown voltage of 230 V minimum and supports a continuous collector current of 15 A with a collector power dissipation of 130 W at 25°C case temperature. The device has a transition frequency of 30 MHz and a DC current gain (hFE) ranging from 80 to 160 in the 'O' classification. It operates within a junction temperature range up to 150°C and is housed in a TO-3P package.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon NPN construction optimized for power amplifier applications
• High collector-emitter breakdown voltage rated at 230 V minimum
• Complementary pairing available with the 2SA1962 PNP transistor
• Suitable for use in high fidelity audio amplifier output stages

Single Bipolar Transistors Applications

• Power amplifier circuits
• High fidelity audio amplifier output stages
• General purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba channels, as markings indicate potential variations. Confirm the specific hFE binning classification required for your design, as the 'O' suffix denotes a gain range of 80 to 160. Ensure thermal management designs account for the 130 W dissipation rating at case temperature. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines under heavy loads or significant temperature changes before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when designing power amplifiers requiring high voltage handling and substantial current capacity. The complementary 2SA1962 should be considered for push-pull configurations. Evaluate the safe operating area curves for thermal stability during operation. Verify that the chosen heat sinking strategy maintains the case temperature within limits to support the specified 130 W power dissipation rating effectively.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5242 series of NPN power transistors manufactured by Toshiba Semiconductor and Storage. These devices are engineered specifically for robust performance in audio power amplification. The series utilizes triple diffused technology to enhance reliability and electrical characteristics compared to standard epitaxial types.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1962 as the complementary PNP counterpart for paired applications. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 'O' classification?

For the 'O' classification, the DC current gain (hFE) ranges from 80 to 160 when measured at VCE = 5 V and IC = 1 A.

Is this transistor suitable for aerospace or medical equipment?

No. Toshiba explicitly states that the product is neither intended nor warranted for use in equipment requiring extraordinarily high levels of quality and reliability, such as aerospace or medical equipment.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is 230 V.