2SC5242RTU

Single Bipolar Transistors Overview

The onsemi 2SC5242RTU is an NPN epitaxial silicon transistor housed in a TO-3P package. It supports a collector current of 17A and dissipates 130W at 25°C case temperature. The device features a collector-emitter breakdown voltage of 250V and a collector-base breakdown voltage of 250V. It operates within a junction temperature range of -50°C to +150°C with a thermal resistance from junction to case of 0.96°C/W. The component provides a current gain bandwidth product of 30MHz.

Single Bipolar Transistors Feature Summary

• High current capability for power amplification
• Wide safe operating area for reliable operation
• Excellent gain linearity for low total harmonic distortion

Single Bipolar Transistors Applications

• High-fidelity audio output amplifier
• General purpose power amplifier

Single Bipolar Transistors Procurement Notes

Verify the specific hFE classification grade (R or O) required for your design, as the datasheet lists distinct part numbers for each bin. Confirm that the TO-3P tube packaging aligns with your assembly process. Ensure thermal management solutions meet the specified junction-to-case thermal resistance limits for continuous operation.

Single Bipolar Transistors Selection Notes

Select this component when high DC collector current and robust power dissipation are required in a through-hole configuration. Consider the complementary PNP transistor 2SA1962/FJA4213 if a matched pair is needed for push-pull topologies. Evaluate the wide safe operating area requirements against your specific load lines to ensure stable performance under varying conditions.

Single Bipolar Transistors Part Context

This device belongs to the family of high-power NPN transistors originally developed by Fairchild Semiconductor. Following the integration into ON Semiconductor, the product line continues to serve the discrete semiconductor market. The 2SC5242RTU is specifically designed for applications demanding high voltage handling and significant current drive capabilities in audio and general power stages.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SC5242/FJA4313 as the primary equivalent identifier. For higher power requirements, consider the 2SC5200/FJL4315 in a TO-264 package. Lower power alternatives include the FJP5200 in a TO-220 package or the FJPF5200 in a TO-220F package.