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2SC5277D2-TL-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP NPN 30MA 10V FT=8G. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SC5277D2-TL-E
- Description：BIP NPN 30MA 10V FT=8G
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SC5277D2-TL-E
Single Bipolar Transistors Overview
The onsemi 2SC5277D2-TL-E is an NPN silicon epitaxial planar transistor designed for high-frequency applications. It features a maximum collector current of 30 mA, a collector-emitter voltage rating of 10 V, and a collector-base voltage of 20 V. The device operates with a maximum power dissipation of 100 mW and supports a transition frequency up to 7 GHz. Packaged in the compact SMCP (SOT-563) surface-mount format, it functions as a single transistor with three pins. The component is rated for junction temperatures up to +150 °C and includes a maximum emitter-base voltage of 1.5 V.
Single Bipolar Transistors Feature Summary
- Engineered for high-frequency signal processing and amplification tasks
- Utilizes a compact surface-mount package for automated assembly integration
- Constructed using silicon epitaxial planar technology for reliability
Single Bipolar Transistors Applications
- RF amplifier circuits
- High-frequency switching applications
- Signal processing modules
Single Bipolar Transistors Procurement Notes
Verify the specific suffix D2 against official manufacturer documentation to confirm pinout configuration and electrical tolerances. Ensure compatibility with SMCP footprint requirements during PCB layout. Confirm RoHS compliance status through current datasheets before finalizing procurement specifications.
Single Bipolar Transistors Selection Notes
Select this component when designing circuits requiring small-signal amplification at frequencies approaching 7 GHz. The low power dissipation rating necessitates careful thermal management within the design. Evaluate the 10 V voltage limit against peak circuit signals to prevent breakdown.
Single Bipolar Transistors Part Context
This part belongs to the discrete semiconductor product category, specifically within the NPN bipolar junction transistor segment. It serves as a specialized component for radio frequency and wireless communication systems where size constraints and high-speed performance are critical design parameters.
Single Bipolar Transistors Replacement Considerations
Consult official substitution guides for equivalent NPN transistors with matching RF characteristics and SMCP packaging. Verify that any alternative component meets the same 7 GHz transition frequency and 10 V voltage ratings.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
