2SC5310-6-TB-E

Single Bipolar Transistors Overview

The onsemi 2SC5310-6-TB-E is an NPN epitaxial planar silicon bipolar junction transistor designed for amplification and switching applications. It operates with a maximum collector-emitter voltage of 25V and supports a continuous collector current of 1A. The device features a small SOT-346 surface-mount package, facilitating compact circuit designs. Key electrical characteristics include a low noise figure suitable for RF stages and high DC current gain. The component is rated for operation up to +150°C junction temperature and dissipates up to 500mW of power.

Single Bipolar Transistors Feature Summary

• NPN epitaxial planar silicon construction for reliable performance
• Optimized for low noise figure in radio frequency applications
• Compact SOT-346 surface-mount package design

Single Bipolar Transistors Applications

• RF amplifier stages
• General purpose switching circuits
• Low noise signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific suffix -6-TB-E against official onsemi documentation to confirm tape-and-reel packaging and binning specifications. Confirm RoHS compliance status through the manufacturer's latest certification documents. Check for any product change notices regarding manufacturing site or material composition updates prior to finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a small-footprint NPN BJT is required for high-frequency amplification. Ensure the 25V VCEO rating meets the circuit's voltage requirements. Consider the 1A Ic limit for load handling. Compare thermal dissipation capabilities against the PCB copper area available for heat spreading in the SOT-346 package.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5310 series of NPN transistors from onsemi. It shares the same core die and electrical specifications as variants with different packaging or trailing zeros, such as the 2SC5310-5. The -6 suffix typically denotes specific packaging configurations like tape and reel, while maintaining identical functional parameters to other members of the family.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SC5310-5 and 2SC5310-6 if pinout and electrical ratings match exactly. Verify that alternative sources provide the same SOT-346 footprint compatibility. Cross-reference hFE bins and noise figure specifications to ensure equivalent performance in sensitive RF applications.