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The CEL 2SC5336-T1-AZ is a silicon NPN single transistor designed for RF applications. It corresponds to the JEITA equivalent part number NE856M02 and utilizes an M02 SOT-89 package. The device features a typical transition frequency (fT) of 6.5 GHz, measured at a test frequency of 1 GHz with VCE set to 10V. Key electrical characteristics include a typical noise figure of 1.1 dB and a typical current gain (hFE) of 120. Maximum ratings specify a collector-emitter voltage (VCEO) of 12V and a maximum collector current (Ic) of 100 mA.
Verify component authenticity by cross-referencing the manufacturer marking code against official CEL documentation. Confirm that the ordering suffix matches the specific tape-and-reel or bulk configuration required for your assembly process. Ensure compliance with relevant environmental standards prior to integration.
Select this component when a low noise figure near 1.1 dB is critical for system sensitivity. The 6.5 GHz transition frequency supports operation well beyond standard AM/FM bands. Verify that the 100 mA collector current limit aligns with the intended biasing conditions and thermal management capabilities of the target PCB layout.
This part belongs to the CEL Silicon Bipolar Transistors family, specifically categorized under Single Transistors. It serves as the commercial equivalent to the NEC/CEL NE856M02 designation. The product line focuses on providing reliable discrete semiconductor solutions for RF front-end architectures requiring precise noise and gain control.
Direct equivalents include the NEC NE856M02. Other compatible options within the same portfolio are the NE85618 and NE85619, provided their respective package styles and minor parameter variations fit the design constraints.