2SC5359-O(Q)

Single Bipolar Transistors Overview

The 2SC5359-O(Q) is a silicon NPN triple diffused power transistor manufactured by Toshiba Semiconductor and Storage. Designed for high-voltage applications, it features a collector-emitter breakdown voltage of 230 V and supports a maximum continuous collector current of 15 A. The device provides a collector power dissipation rating of 180 W at 25°C case temperature. It exhibits a minimum DC current gain (hFE) of 80 under standard test conditions and includes an O suffix classification indicating a specific hFE range of 80 to 160. The component utilizes a flange mount package suitable for thermal management in power amplifier circuits.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon NPN construction designed for robust power handling
• High breakdown voltage capability supporting demanding supply rails
• Optimized for complementary pairing with the 2SA1987 PNP transistor

Single Bipolar Transistors Applications

• Output stages for 100-W high fidelity audio amplifiers
• General purpose power amplifier circuits requiring high voltage tolerance
• Power switching applications within safe operating area limits

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate potential variations between MCV and RoHS compliant versions. Confirm the specific hFE binning requirements match the O suffix designation before finalizing procurement specifications. Ensure design accounts for absolute maximum ratings to maintain reliability standards.

Single Bipolar Transistors Selection Notes

Select this component when designing audio output stages requiring high voltage headroom and substantial current drive capabilities. The complementary relationship with the 2SA1987 facilitates balanced push-pull configurations. Evaluate thermal management strategies carefully, as the 180 W dissipation rating depends on maintaining the specified case temperature during operation.

Single Bipolar Transistors Part Context

This transistor belongs to Toshiba's discrete semiconductor lineup focusing on power amplification. It serves as a specialized solution for high-fidelity audio equipment where linearity and power handling are critical. The triple diffused process technology ensures stable performance characteristics across varying load conditions typical in professional audio systems.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1987 as the complementary counterpart. No other direct substitute part numbers are documented in the provided source material. Verify pinout and electrical parameters against existing designs if considering alternative manufacturers.

Single Bipolar Transistors FAQ

What is the specific DC current gain range for the O suffix?

The O suffix indicates a DC current gain (hFE) classification ranging from 80 to 160 when tested at VCE = 5 V and IC = 1 A.

Is this component intended for use in aerospace or medical equipment?

No. Toshiba explicitly states that the product is neither intended nor warranted for use in equipment requiring extraordinarily high levels of quality, such as aerospace, medical, or nuclear facilities.

How does the transition frequency affect its application?

The transition frequency (fT) is typically 30 MHz at IC = 1 A, which supports its suitability for audio frequency amplification rather than high-frequency RF applications.