2SC5359

Single Bipolar Transistors Overview

The EVVO 2SC5359 is an NPN silicon power transistor designed for high-power amplifier applications. It features a flange mount plastic/epoxy package with three pins and collector connection. The device supports a maximum collector current of 15 A and a collector-emitter voltage of 230 V. It has a minimum DC current gain (hFE) of 80 and can dissipate up to 180 W of power. The component operates at temperatures up to 150 °C and is classified as a single configuration discrete semiconductor.

Single Bipolar Transistors Feature Summary

• Designed specifically for power amplifier applications
• Capable of handling high collector currents up to 15 A
• Supports high voltage operation with 230 V collector-emitter rating
• Utilizes a robust flange mount package for effective thermal management

Single Bipolar Transistors Applications

• Power amplifier circuits
• High-current switching applications
• Audio output stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin, as the provided data indicates Toshiba as the original manufacturer while EVVO is listed as a distributor or alternative source. Confirm RoHS compliance status, noting the source states it is non-compliant. Ensure the package type matches the required flange mount specification for your thermal design needs.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high power dissipation capabilities up to 180 W. The 230 V breakdown voltage makes it suitable for higher voltage supply rails compared to standard low-voltage transistors. Consider the TO-3P or similar flange mount package requirements for proper heat sinking and mechanical mounting in your enclosure design.

Single Bipolar Transistors Part Context

This part belongs to the category of bipolar junction transistors (BJT), specifically NPN power transistors. It is functionally related to other high-power audio and RF amplification components like the 2SA1943 PNP counterpart, often used in complementary push-pull configurations for balanced signal amplification.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.