2SC536300L

2SC536300L

  • Description:RF TRANS NPN 6V 10GHZ SSMINI3-G1
  • Series:-

SKU:b99c709dfd8d Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 6V 10GHZ SSMINI3-G1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):6V
  • Frequency - Transition:10GHz
  • Noise Figure (dB Typ @ f):1.7dB @ 900MHz
  • Gain:6.5dB
  • Power - Max:125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 10mA, 3V
  • Current - Collector (Ic) (Max):30mA
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSmini3-G1
  • Grade:-
  • Qualification:-

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2SC536300L

Overview

The Panasonic 2SC5363 is a silicon NPN epitaxial planar transistor designed for low-voltage high-frequency amplification. It features a transition frequency (fT) of up to 10 GHz at VCE = 3 V and IC = 10 mA, with a forward transfer gain (|S21e|²) of 6.5 dB at 0.9 GHz. The device operates within a collector-emitter voltage (VCEO) of 6 V and supports a maximum collector current of 30 mA. Power dissipation is rated at 125 mW, with a junction temperature limit of 125 °C. Packaged in the SS-Mini type SC-75 format, it offers small collector output capacitance (Cob) of 0.4 to 0.7 pF.

Feature Summary

  • High transition frequency suitable for RF applications
  • Small collector output capacitance for signal integrity
  • SS-Mini package enabling downsizing and automatic insertion

Applications

  • Low-voltage high-frequency amplification circuits
  • General electronic equipment such as measuring instruments
  • Communications equipment signal processing

Procurement Notes

Verify component authenticity through authorized distributors or official Panasonic channels. Confirm datasheet revisions match design requirements. Check lifecycle status as maintenance/discontinued items may have limited availability. Ensure proper handling procedures are followed during storage and assembly to prevent electrostatic discharge damage.

Selection Notes

Select this component when low-voltage operation and high-frequency performance are required. Consider the 6 V collector-emitter voltage limit and 30 mA current rating for circuit design. Evaluate thermal management needs given the 125 mW power dissipation capability. Verify compatibility with the SC-75 package footprint for PCB layout.

Part Context

The 2SC5363 belongs to Panasonic's lineup of silicon NPN epitaxial planar transistors. It is specifically engineered for low-voltage high-frequency amplification tasks. The device utilizes an SS-Mini type package to facilitate equipment miniaturization and automated manufacturing processes.

Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-reference electrical parameters such as fT, VCEO, and package dimensions before substitution. Ensure replacement components meet the same safety and reliability standards for intended applications.

2SC536300L2SC536300L

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