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The Panasonic 2SC5363 is a silicon NPN epitaxial planar transistor designed for low-voltage high-frequency amplification. It features a transition frequency (fT) of up to 10 GHz at VCE = 3 V and IC = 10 mA, with a forward transfer gain (|S21e|²) of 6.5 dB at 0.9 GHz. The device operates within a collector-emitter voltage (VCEO) of 6 V and supports a maximum collector current of 30 mA. Power dissipation is rated at 125 mW, with a junction temperature limit of 125 °C. Packaged in the SS-Mini type SC-75 format, it offers small collector output capacitance (Cob) of 0.4 to 0.7 pF.
Verify component authenticity through authorized distributors or official Panasonic channels. Confirm datasheet revisions match design requirements. Check lifecycle status as maintenance/discontinued items may have limited availability. Ensure proper handling procedures are followed during storage and assembly to prevent electrostatic discharge damage.
Select this component when low-voltage operation and high-frequency performance are required. Consider the 6 V collector-emitter voltage limit and 30 mA current rating for circuit design. Evaluate thermal management needs given the 125 mW power dissipation capability. Verify compatibility with the SC-75 package footprint for PCB layout.
The 2SC5363 belongs to Panasonic's lineup of silicon NPN epitaxial planar transistors. It is specifically engineered for low-voltage high-frequency amplification tasks. The device utilizes an SS-Mini type package to facilitate equipment miniaturization and automated manufacturing processes.
Consult official Panasonic documentation for verified substitute part numbers. Cross-reference electrical parameters such as fT, VCEO, and package dimensions before substitution. Ensure replacement components meet the same safety and reliability standards for intended applications.