2SC5415AF-TD-E

Overview

The 2SC5415AF-TD-E is an NPN silicon RF bipolar transistor manufactured by onsemi. It is designed for high-frequency applications with a typical transition frequency (fT) of 6.7 GHz. The device supports a maximum collector-emitter voltage (VCEO) of 12 V and a continuous collector current of 100 mA. It features a minimum DC current gain (hFE) of 90. The component operates within a temperature range of -55°C to +150°C and dissipates up to 1.3 W of power. It is housed in a PCP-3 surface-mount package, suitable for compact RF circuit designs.

Feature Summary

• High cut-off frequency optimized for RF signal processing
• High small-signal gain characteristics at 1 GHz
• Single NPN configuration in a compact SMD footprint

Applications

• High-frequency low-noise amplifier stages
• RF signal amplification in communication systems
• Microwave circuit design requiring high fT performance

Procurement Notes

Verify the End-of-Life (EOL) status before integration, as discontinuance notifications may apply. Confirm RoHS compliance details through official datasheets. Check for updated ordering suffixes due to potential Fairchild-onsemi integration naming changes. Validate availability through authorized distributors as stock levels fluctuate. Ensure ECAD models are compatible with your design tools prior to procurement.

Selection Notes

Select this component for applications requiring a 6.7 GHz transition frequency and 12 V breakdown voltage. Compare against similar series parts like the 2SC5415A for pinout and electrical equivalence. Ensure the PCP-3 package fits the PCB layout constraints. Verify that the 100 mA current rating meets the load requirements. Consider thermal management for the 1.3 W power dissipation limit.

Part Context

This part belongs to the 2SC5415A series of RF transistors from onsemi. It shares specifications with other variants in the family but differs in packaging or tape-and-reel configuration. The series targets high-gain, high-frequency applications. It is distinct from higher-voltage or higher-current counterparts in the same product line.

Replacement Considerations

Direct substitutes include the 2SC5415A. Verify electrical parameters and package compatibility before substitution. Cross-reference with other 6.7 GHz NPN RF transistors if sourcing issues arise.