2SC5435-T1-A

2SC5435-T1-A

$0.15
  • Description:RF TRANS NPN 6V 12GHZ 3-MINI
  • Series:-

SKU:47e7a96f450d Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 6V 12GHZ 3-MINI
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):6V
  • Frequency - Transition:12GHz
  • Noise Figure (dB Typ @ f):1.5dB @ 2GHz
  • Gain:8.5dB
  • Power - Max:125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:75 @ 10mA, 3V
  • Current - Collector (Ic) (Max):30mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-623F
  • Supplier Device Package:3-SuperMiniMold
  • Grade:-
  • Qualification:-

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2SC5435-T1-A

Overview

The 2SC5435-T1-A is an NPN bipolar RF transistor manufactured by Renesas Electronics Corporation. It features a collector-emitter breakdown voltage of 6V and a transition frequency of 12GHz. The device supports a maximum collector current of 30mA and dissipates up to 125mW of power. It is housed in a surface-mount 3-SuperMiniMold package, also identified as SOT-623F.

Feature Summary

  • NPN bipolar junction transistor architecture optimized for radio frequency applications
  • High-speed operation capability with a 12GHz transition frequency
  • Low-power design suitable for portable and compact electronic systems

Applications

  • RF signal amplification circuits
  • Wireless communication modules
  • Portable electronic devices requiring high-frequency performance

Procurement Notes

Verify the specific ordering suffix against official Renesas documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested part matches the exact electrical characteristics required for the target RF application. Cross-reference the package designation with schematic footprints to guarantee mechanical compatibility during assembly.

Selection Notes

Select this component when designing circuits that require an NPN transistor with a 6V breakdown voltage and 12GHz transition frequency. Ensure the system operates within the 125mW power dissipation limit. Verify that the 3-SuperMiniMold footprint aligns with the PCB layout constraints and manufacturing capabilities.

Part Context

This component belongs to Renesas Electronics' portfolio of small-signal bipolar transistors designed for RF use. It is engineered for surface-mount technology integration. The SuperMiniMold package provides a compact form factor suitable for modern miniaturized electronics and high-density circuit board designs.

Replacement Considerations

Consult official Renesas substitution lists for verified alternatives. Do not assume cross-compatibility with other manufacturers without verifying pinout, electrical parameters, and thermal characteristics.

2SC5435-T1-A2SC5435-T1-A
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