SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 2SC5435-T1-A is an NPN bipolar RF transistor manufactured by Renesas Electronics Corporation. It features a collector-emitter breakdown voltage of 6V and a transition frequency of 12GHz. The device supports a maximum collector current of 30mA and dissipates up to 125mW of power. It is housed in a surface-mount 3-SuperMiniMold package, also identified as SOT-623F.
Verify the specific ordering suffix against official Renesas documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested part matches the exact electrical characteristics required for the target RF application. Cross-reference the package designation with schematic footprints to guarantee mechanical compatibility during assembly.
Select this component when designing circuits that require an NPN transistor with a 6V breakdown voltage and 12GHz transition frequency. Ensure the system operates within the 125mW power dissipation limit. Verify that the 3-SuperMiniMold footprint aligns with the PCB layout constraints and manufacturing capabilities.
This component belongs to Renesas Electronics' portfolio of small-signal bipolar transistors designed for RF use. It is engineered for surface-mount technology integration. The SuperMiniMold package provides a compact form factor suitable for modern miniaturized electronics and high-density circuit board designs.
Consult official Renesas substitution lists for verified alternatives. Do not assume cross-compatibility with other manufacturers without verifying pinout, electrical parameters, and thermal characteristics.