2SC5454-T1-A

Overview

The Renesas Electronics 2SC5454-T1-A is an NPN epitaxial silicon transistor designed for high-frequency applications. It features a gain bandwidth product of 14.5 GHz and low noise characteristics suitable for RF amplification. The device operates at low voltages, with a collector-to-emitter voltage rating of 6V and a maximum collector current of 50 mA. Packaged in a compact 4-pin Mini Mold format, it offers small reverse transfer capacitance to minimize signal feedback. Key electrical parameters include a DC current gain ranging from 75 to 150 and a typical insertion power gain of 12.0 dB at 2 GHz.

Feature Summary

• High gain performance optimized for radio frequency amplification
• Low noise figure suitable for sensitive receiver front-ends
• Small reverse transfer capacitance reduces unwanted signal feedback
• Capable of operation at low supply voltages

Applications

• RF amplifier stages in communication equipment
• Low-noise amplifiers (LNA) for wireless systems
• High-frequency signal processing circuits

Procurement Notes

Verify the specific ordering suffix -T1-A against official Renesas documentation to confirm packaging and tape-and-reel specifications. Confirm component availability status as phase-out information may impact long-term sourcing. Ensure compliance with RoHS directives and environmental regulations applicable to your region before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high gain bandwidth products near 14.5 GHz. Evaluate thermal management requirements based on the 200 mW total power dissipation limit. Consider the 4-pin Mini Mold package dimensions for PCB layout constraints. Verify that the operating voltage remains within the 6V collector-to-emitter rating for reliable performance.

Part Context

This part belongs to the NE67739 / 2SC5454 series of NPN epitaxial silicon transistors originally developed by California Eastern Laboratories and now distributed by Renesas Electronics. The device utilizes high-frequency silicon processes to achieve superior RF performance metrics. It is classified under RF bipolar transistors intended for specialized analog and radio frequency circuit designs.

Replacement Considerations

Consult official Renesas cross-reference lists for verified substitutes. No public substitute part numbers are confirmed in the provided datasheet.