2SC5501A-4-TR-E

Overview

The 2SC5501A-4-TR-E is an NPN single RF bipolar transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 10V and a continuous collector current of 70mA. The device exhibits a typical transition frequency (fT) of 7GHz at 1GHz, with a minimum DC current gain (hFE) of 90. Power dissipation is rated at 500mW maximum. It operates within a temperature range of -55°C to +150°C and utilizes the MCP4 package.

Feature Summary

• Designed for low-noise applications with a typical noise figure of 1.0dB at 1GHz
• Provides high gain characteristics with a typical S-parameter magnitude of 13dB at 1GHz
• Engineered for VHF to UHF wide-band amplifier operations

Applications

• VHF to UHF wide-band low-noise amplifiers
• RF signal processing circuits requiring high cut-off frequencies
• Communication systems operating in the GHz range

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm the tape-and-reel packaging configuration. Ensure that the component meets all relevant RoHS directives and environmental compliance standards required for your manufacturing process before finalizing procurement orders.

Selection Notes

Select this component when designing circuits that require high-frequency performance up to 7GHz with low noise figures. Consider the 500mW power dissipation limit and the MCP4 package dimensions during thermal management and PCB layout planning to ensure reliable operation under specified load conditions.

Part Context

This part belongs to the 2SC5501A series of RF transistors from onsemi. It shares core electrical specifications with variants such as the 2SC5501A but differs in packaging and reel configuration. The series is optimized for high-speed switching and amplification in wireless communication infrastructure.

Replacement Considerations

Direct substitutes include other 2SC5501A variants from onsemi or equivalent RF transistors from manufacturers like Sanyo Semicon Device, provided they match the 10V rating, 70mA current, and 7GHz fT specifications.