2SC5508-T2-A

Overview

The CEL 2SC5508-T2-A is an NPN silicon RF transistor designed for low-noise, high-gain amplification. It utilizes a flat-lead 4-pin thin-type super minimold (M04) package with a thickness of 0.59 mm. The device features a transition frequency (fT) of 25 GHz and operates at a maximum collector-to-emitter voltage of 3.3 V. Key electrical characteristics include a typical noise figure of 1.1 dB and a maximum available power gain of 19 dB at 2 GHz. The component supports a continuous collector current of 35 mA and dissipates up to 15 mW of total power.

Feature Summary

• Optimized for low-noise and high-gain amplification applications
• Utilizes 25 GHz fT technology for high-frequency performance
• Employed in a compact flat-lead 4-pin thin-type super minimold package

Applications

• Low-noise amplifier circuits
• High-gain RF signal processing
• Microwave communication systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and supply form. Confirm that the M04 package dimensions align with PCB footprint requirements. Ensure electrostatic discharge precautions are observed during handling due to device sensitivity. Validate RoHS compliance status through the manufacturer's latest release notes before integration.

Selection Notes

Select this component when designing circuits requiring minimal noise figures around 1.1 dB at 2 GHz. Consider the 35 mA continuous collector current limit for biasing configurations. Evaluate the thermal resistance values if operating without a heatsink or on standard ceramic boards. Compare the 15 mW power dissipation rating against expected operational loads to ensure reliability within the specified temperature range.

Part Context

This part number represents the reel-packaged variant of the 2SC5508 series manufactured by CEL, a business partner of Renesas Electronics Corporation. It shares identical electrical specifications with the non-reel 2SC5508-A but differs in supply form. The device belongs to a family of NPN silicon RF transistors intended for microwave frequencies.

Replacement Considerations

Cross-reference with NE662M04 as it shares identical electrical parameters and pinout configuration. Verify mechanical compatibility of the M04 package dimensions before substituting.