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The Panasonic 2SC555600L is a silicon NPN epitaxial planar transistor designed for UHF band low-noise amplification. It features a Mini3-G1 package (EIAJ SC-59) suitable for automatic insertion and downsizing. Key electrical parameters include a collector-base voltage of 15 V, collector-emitter voltage of 10 V, and maximum collector current of 80 mA. The device exhibits a transition frequency of up to 6 GHz at 800 MHz and a noise figure as low as 1.7 dB under standard test conditions.
Verify the component lifecycle status before procurement, as the datasheet indicates maintenance or discontinued stages. Confirm that the specific ordering suffix matches the required tape or magazine packing format. Ensure compliance with RoHS directives and verify export control classifications if applicable to your region.
Select this component when a low noise figure and high transition frequency are critical for UHF applications. Verify that the 10 V collector-emitter voltage rating meets the circuit requirements. Consider the Mini3-G1 package dimensions for PCB layout constraints and ensure thermal dissipation capabilities align with the 300 mW power rating.
This part belongs to the Panasonic 2SC5556 series of silicon NPN transistors. It is specifically engineered for high-frequency performance in the UHF range. The product line emphasizes compact packaging and low noise characteristics for modern communication devices.
Consult official documentation for verified substitutes. Cross-reference key parameters such as transition frequency, noise figure, and package type when evaluating alternative components.