2SC5569-TD-E

Single Bipolar Transistors Overview

The onsemi 2SC5569-TD-E is a single NPN epitaxial planar silicon bipolar junction transistor (BJT) housed in an SOT-89 surface-mount package. It is rated for a maximum collector current of 7 A and a collector-emitter voltage of 50 V, with a power dissipation capacity of 3.5 W. The device features a minimum DC current gain (hFE) of 200 and supports operating temperatures from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High collector current capability suitable for demanding load applications
• Low saturation voltage for efficient switching performance
• Ultrasmall SOT-89 package design enabling compact circuit layouts

Single Bipolar Transistors Applications

• DC/DC converter circuits
• Relay driver stages
• Lamp driver modules
• Motor driver interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact binning or tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability may vary by region.

Single Bipolar Transistors Selection Notes

Select this component when high current handling and low saturation voltage are required in a small form factor. Ensure the thermal management solution supports the 3.5 W dissipation rating within the target operating temperature range.

Single Bipolar Transistors Part Context

This part belongs to the general-purpose NPN transistor family designed for switching applications. It utilizes FBET process technology to achieve high current gain and low ON resistance, making it suitable for modern consumer electronics and industrial control systems requiring compact power solutions.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference guides for verified substitutes. Generic replacements must match the 7A current rating, 50V voltage rating, and SOT-89 package dimensions to ensure functional compatibility.