2SC5606-T1-A

2SC5606-T1-A

$1.36
  • Description:RF TRANS NPN 3.3V 21GHZ SOT-523
  • Series:-

SKU:f1b3707a5c0a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF TRANS NPN 3.3V 21GHZ SOT-523
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):3.3V
  • Frequency - Transition:21GHz
  • Noise Figure (dB Typ @ f):1.2dB @ 2GHz
  • Gain:14dB
  • Power - Max:115mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 2V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-523
  • Supplier Device Package:SOT-523
  • Grade:-
  • Qualification:-

Download product information

2SC5606-T1-A

Overview

The CEL 2SC5606-T1-A is a PNP epitaxial planar silicon transistor designed for general-purpose amplification and switching applications. It utilizes the TO-92 surface-mount package, providing a compact form factor suitable for space-constrained circuit designs. The device features a collector-emitter breakdown voltage of -45V and a continuous collector current rating of 0.1A. With a DC current gain (hFE) range typically spanning from 110 to 800, it offers high sensitivity for low-level signal processing. The component operates within a junction temperature range of up to 150°C and supports storage temperatures between -65°C and 150°C, ensuring reliability in standard electronic environments.

Feature Summary

  • PNP polarity configuration utilizing epitaxial planar silicon technology
  • High DC current gain capability for efficient signal amplification
  • Compact TO-92 surface-mount package design
  • Suitable for general-purpose switching and linear amplifier circuits

Applications

  • General-purpose audio pre-amplifier stages
  • Low-power switching logic interfaces
  • Signal conditioning circuits requiring high gain
  • Driver stages for relay or LED control

Procurement Notes

Verify the manufacturer designation explicitly as CEL when sourcing this specific variant. Confirm the suffix -T1-A corresponds to the required tape-and-reel packaging format if automated assembly is planned. Ensure the ordering information matches the exact part number to avoid confusion with similar PNP transistors from other manufacturers that may share the base 2SC5606 nomenclature but differ in electrical characteristics or pinout configurations.

Selection Notes

Select this component when a PNP transistor with moderate voltage handling and high current gain is required in a small surface-mount footprint. Compare the hFE binning requirements against the specific application's base drive capabilities. Verify that the thermal dissipation limits align with the expected power load in the target circuit design. Consider the operating temperature range to ensure stability under varying environmental conditions.

Part Context

This component belongs to the broader family of small-signal bipolar junction transistors commonly used in consumer electronics and industrial control systems. The 2SC5606 designation generally refers to a PNP silicon transistor, often complementing NPN counterparts like the 2SC5605. While the base model number is widely recognized across multiple semiconductor foundries, the CEL-specific version ensures adherence to particular manufacturing tolerances and quality standards defined by the original equipment manufacturer.

2SC5606-T1-A2SC5606-T1-A
$1.36
Buy Now