2SC563200L

Overview

The Panasonic 2SC563200L is a silicon NPN epitaxial planar transistor designed for high-frequency amplification and switching applications. It features a transition frequency of up to 1.1 GHz at VCE = 5V and IC = 15 mA, with a forward current transfer ratio (hFE) ranging from 100 to 350 at IC = 2 mA and VCE = 4 V. The device supports a maximum collector current of 50 mA and power dissipation of 150 mW, housed in an SMini3-G1 package.

Feature Summary

• High transition frequency suitable for RF amplification
• S-Mini type package enables equipment downsizing
• Supports automatic insertion via tape packing

Applications

• High-frequency amplification circuits
• Switching applications
• General electronic equipment

Procurement Notes

Verify the specific lifecycle stage before procurement, as this component falls under maintenance or discontinued categories. Confirm availability through authorized channels and check for updated product standards to ensure specifications remain valid for final design implementation.

Selection Notes

Select this component when a small form factor is required alongside high-frequency performance. Ensure the operating conditions stay within the absolute maximum ratings, particularly regarding junction temperature and transient states during power-on or mode-switching.

Part Context

This part belongs to the 2SC5632 series manufactured by Panasonic Electronic Components. It utilizes a silicon NPN epitaxial planar structure optimized for compact designs. The marking symbol on the package is '2R'.

Replacement Considerations

Consult official documentation for verified substitutes. Cross-reference parameters such as transition frequency, hFE, and package dimensions to ensure compatibility with existing circuit layouts.