2SC5632G0L

Overview

The Panasonic 2SC5632G0L is a silicon NPN epitaxial planar transistor designed for high-frequency amplification and switching applications. It features an SMini3-F2 surface-mount package to facilitate equipment downsizing and automated insertion. Key electrical parameters include a collector-emitter voltage of 8V, a maximum collector current of 50mA, and a transition frequency reaching 1.1GHz at 15mA. The device supports a junction temperature up to 150°C and complies with the RoHS Directive.

Feature Summary

• High transition frequency suitable for RF amplification
• SMini type package enables automatic insertion and board space reduction

Applications

• High-frequency amplification circuits
• General electronic equipment
• Communications equipment
• Measuring instruments

Procurement Notes

Verify component authenticity through authorized channels as this part may be discontinued or subject to supply constraints. Confirm that the specific ordering suffix matches the required packaging format. Ensure compliance with local import regulations regarding semiconductor components before finalizing acquisition plans.

Selection Notes

Select this component when a small footprint and high-speed switching capability are required within low-voltage limits. Verify that the 8V collector-emitter rating and 50mA current capacity align with the circuit design requirements. Consider thermal management capabilities given the 150°C maximum junction temperature specification.

Part Context

This model belongs to the Panasonic 2SC5632 series of silicon NPN transistors. It is specifically engineered for compact designs requiring reliable performance in standard consumer and industrial electronics. The product line emphasizes miniaturization without compromising high-frequency operational characteristics.

Replacement Considerations

Public confirmed substitute part numbers: 15GN03MA-TL-E, BFP193WH6327XTSA1, BFP420H6740XTSA1, BFP520H6327XTSA1.