Single Bipolar Transistors 2SC5658M3T5G product image

2SC5658M3T5G

$0.14
  • Description:TRANS NPN 50V 0.1A SOT-723
  • Series:-

SKU:7a6c65491779 Category: Brand:

  
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2SC5658M3T5G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 0.1A SOT-723. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5658M3T5G

  • Description:TRANS NPN 50V 0.1A SOT-723
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 60mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:260 mW
  • Frequency - Transition:180MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:SOT-723

Single Bipolar Transistors datasheet and documents for 2SC5658M3T5G

2SC5658M3T5G

Single Bipolar Transistors Overview

The onsemi 2SC5658M3T5G is a single NPN bipolar junction transistor (BJT) housed in an SOT-723 surface-mount package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 150 mA. The device offers a transition frequency of 180 MHz and a DC current gain of at least 120 at 1 mA and 6 V. Power dissipation is rated at 260 mW, with a collector-base breakdown voltage of 50 V and an emitter-base breakdown voltage of 7 V. Operating temperature ranges from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Single NPN configuration optimized for general-purpose switching and amplification tasks
  • High-frequency performance capability supported by a 180 MHz transition frequency
  • Compact SOT-723 surface-mount footprint designed for space-constrained PCB layouts

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Low-power electronic switching applications
  • Consumer electronics internal logic interfacing

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and compliance status. Confirm RoHS3 adherence and check for any Product Change Notifications regarding assembly or obsolescence before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with moderate voltage ratings and high-speed switching characteristics is required. Ensure the design accommodates the 260 mW power dissipation limit within the thermal constraints of the SOT-723 package.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5658 series of small-signal transistors manufactured by onsemi. It utilizes silicon technology and is designed for surface-mount assembly. The M3 suffix typically indicates compliance with specific environmental standards such as RoHS.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

2SC5658M3T5G2SC5658M3T5G
$0.14
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