Single Bipolar Transistors 2SC5659T2LP product image

2SC5659T2LP

$0.38
  • Description:TRANS NPN 25V 0.05A VMT3
  • Series:-

SKU:b4e13936e93f Category: Brand:

  
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2SC5659T2LP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 25V 0.05A VMT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5659T2LP

  • Description:TRANS NPN 25V 0.05A VMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:82 @ 1mA, 6V
  • Power - Max:150 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:VMT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC5659T2LP

2SC5659T2LP

Single Bipolar Transistors Overview

The ROHM 2SC5659T2LP is a high-frequency NPN bipolar junction transistor designed for surface-mount applications. It features a collector-emitter voltage (VCEO) of 25 V and a maximum collector current (IC) of 50 mA. The device achieves a transition frequency (fT) of up to 300 MHz with a typical output capacitance (Cob) of 1.3 pF. Power dissipation is rated at 150 mW, and the DC current gain (hFE) ranges from 82 to 180.

Single Bipolar Transistors Feature Summary

  • Optimized for high-frequency amplification with low collector capacitance
  • Suitable for RF amplifier and local oscillator circuits
  • Designed for frequency converter applications

Single Bipolar Transistors Applications

  • High frequency amplifier
  • Frequency converter
  • RF amplifier
  • Local oscillator

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and taping specifications. Ensure compatibility with standard SOT-723 footprints during layout design. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing component selection.

Single Bipolar Transistors Selection Notes

Select this component when circuit requirements demand a small-signal NPN transistor with high-speed switching capabilities. The low output capacitance supports operation in radio frequency environments. Verify that the required hFE binning aligns with the 82 to 180 classification range specified in the electrical characteristics table.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5659 series of general-purpose high-frequency transistors manufactured by ROHM Semiconductor. It utilizes the VMT3 package variant within the SOT-723 form factor. The device is intended for use in consumer electronics and communication equipment requiring compact, high-performance amplification stages.

Single Bipolar Transistors Replacement Considerations

Consult the manufacturer's datasheet or authorized distributor databases for verified direct replacements. Cross-reference pinouts and absolute maximum ratings to ensure functional equivalence without modifying existing board layouts.

Single Bipolar Transistors FAQ

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (BVCBO) is 40 V.

How is the DC current gain classified?

The DC current gain (hFE) is classified into ranks ranging from 82 to 180 under test conditions of VCE = 6V and IC = 1mA.

What is the typical output capacitance value?

The typical output capacitance (Cob) is 1.3 pF, measured at VCB = 6V and IE = 0A.

2SC5659T2LP2SC5659T2LP
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