2SC5662T2LN

2SC5662T2LN

$0.09
  • Description:RF TRANS NPN 11V 3.2GHZ VMT3
  • Series:-

SKU:1d4483bd9156 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 11V 3.2GHZ VMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):11V
  • Frequency - Transition:3.2GHz
  • Noise Figure (dB Typ @ f):3.5dB @ 500MHz
  • Gain:-
  • Power - Max:150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 5mA, 10V
  • Current - Collector (Ic) (Max):50mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:VMT3
  • Grade:-
  • Qualification:-

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2SC5662T2LN

Overview

The 2SC5662T2LN is a high-frequency NPN bipolar junction transistor manufactured by Rohm Semiconductor. It features a VMT3 (SOT-723) surface-mount package with a collector-emitter breakdown voltage of 11V and a maximum collector current of 50mA. The device achieves a typical transition frequency of 3.2GHz at 500MHz, supporting UHF/VHF applications. Key electrical parameters include a DC current gain ranging from 56 to 180, an output capacitance of 0.8pF typ., and a noise figure of 3.5dB at 500MHz. Power dissipation is rated at 150mW, with a junction temperature limit of 150°C.

Feature Summary

  • High transition frequency for efficient high-frequency amplification
  • Small collector-base time constant and low output capacitance for improved gain
  • Low noise figure suitable for sensitive signal processing

Applications

  • High frequency amplifier circuits
  • UHF/VHF frequency oscillators
  • VHF frequency converters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm packaging details and marking codes. Ensure ESD protection measures are implemented during handling due to electrostatic sensitivity. Confirm ambient temperature derating requirements for power dissipation in sealed environments before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring a compact SOT-723 footprint with high-speed switching capabilities. Evaluate the 11V collector-emitter voltage rating against peak circuit voltages. Consider the 150mW power dissipation limit and thermal management needs when integrating into dense PCB layouts or enclosed systems.

Part Context

This part belongs to the 2SC5662 series of high-frequency transistors designed for RF applications. The T2L suffix indicates the specific taping code and reel size configuration used for automated surface-mount assembly processes.

Replacement Considerations

Consult the official datasheet for approved substitute part numbers that maintain identical pinout and electrical characteristics. Verify compatibility with existing board space and soldering profiles before implementing any alternative components.

FAQ

What is the typical transition frequency of the 2SC5662?

The typical transition frequency (fT) is 3.2GHz under conditions of VCE=10V, IE=-10mA, and f=500MHz.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter breakdown voltage (BVCEO) is 11V when IC=1mA.

How is the DC current gain classified?

The DC current gain (hFE) is classified into ranks: 56-120 and 82-180, measured at VCE=10V and IC=5mA.

2SC5662T2LN2SC5662T2LN
$0.09
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