Single Bipolar Transistors 2SC5707-E product image

2SC5707-E

  • Description:TRANS NPN 50V 8A TP
  • Series:-

SKU:adc0786cd110 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SC5707-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 8A TP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5707-E

  • Description:TRANS NPN 50V 8A TP
  • Series:-
  • Mfr:onsemi
  • Package:Bag
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:240mV @ 175mA, 3.5A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:330MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package:TP

Single Bipolar Transistors datasheet and documents for 2SC5707-E

2SC5707-E

Single Bipolar Transistors Overview

The onsemi 2SC5707-E is a single NPN bipolar junction transistor (BJT) designed for through-hole mounting in TO-251-3 packages. It supports a maximum continuous collector current of 8 A and a collector-emitter voltage (VCEO) of 50 V, with a collector-base voltage (VCBO) rating of 100 V. The device features a power dissipation capacity of 1 W and a transition frequency (fT) of 330 MHz. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at specified test conditions and a collector-emitter saturation voltage of 160 mV. The component operates at temperatures up to +150°C.

Single Bipolar Transistors Feature Summary

  • High current handling capability suitable for power switching applications
  • Low saturation voltage for improved efficiency in linear or saturated operation
  • Wide operating temperature range supporting demanding thermal environments

Single Bipolar Transistors Applications

  • General-purpose power switching circuits
  • Linear regulator output stages
  • Driver circuits for loads requiring moderate current levels

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official documentation, as package variations exist within the family. Confirm end-of-life status with the manufacturer prior to design finalization. Ensure RoHS compliance requirements match the specific production batch. Validate that the TO-251-3 footprint aligns with the target PCB layout constraints.

Single Bipolar Transistors Selection Notes

Select this component when a through-hole NPN BJT with 8 A current capacity is required. Compare the 1 W power dissipation limit against thermal management capabilities. Consider the 330 MHz bandwidth if high-speed switching is involved. Evaluate alternative packages like TP-FA if surface mount assembly is preferred for the same electrical specifications.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5707 series from onsemi, categorized under discrete semiconductor products. It serves as a standard bipolar transistor solution for industrial and consumer electronics. The component is distinct from surface-mount variants such as the 2SC5707-TL-E, which utilizes a different package profile while maintaining similar electrical ratings.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data.

2SC5707-E2SC5707-E

Click on the inquiry