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2SC5707-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 8A TP. Review the specifications below when checking this part for your BOM.
The onsemi 2SC5707-E is a single NPN bipolar junction transistor (BJT) designed for through-hole mounting in TO-251-3 packages. It supports a maximum continuous collector current of 8 A and a collector-emitter voltage (VCEO) of 50 V, with a collector-base voltage (VCBO) rating of 100 V. The device features a power dissipation capacity of 1 W and a transition frequency (fT) of 330 MHz. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at specified test conditions and a collector-emitter saturation voltage of 160 mV. The component operates at temperatures up to +150°C.
Verify the specific suffix against official documentation, as package variations exist within the family. Confirm end-of-life status with the manufacturer prior to design finalization. Ensure RoHS compliance requirements match the specific production batch. Validate that the TO-251-3 footprint aligns with the target PCB layout constraints.
Select this component when a through-hole NPN BJT with 8 A current capacity is required. Compare the 1 W power dissipation limit against thermal management capabilities. Consider the 330 MHz bandwidth if high-speed switching is involved. Evaluate alternative packages like TP-FA if surface mount assembly is preferred for the same electrical specifications.
This part belongs to the 2SC5707 series from onsemi, categorized under discrete semiconductor products. It serves as a standard bipolar transistor solution for industrial and consumer electronics. The component is distinct from surface-mount variants such as the 2SC5707-TL-E, which utilizes a different package profile while maintaining similar electrical ratings.
Publicly confirmed substitute part numbers are not available in the provided source data.
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