2SC5750-T1-A

Overview

The 2SC5750-T1-A is an NPN silicon RF bipolar transistor manufactured by CEL. It operates at a transition frequency of 15GHz with a typical noise figure of 1.7dB at 2GHz. The device provides a gain of 15dB and supports a collector-emitter voltage of 6V. Packaged in the SOT-343 surface-mount format, it is designed for high-frequency applications requiring low noise performance.

Feature Summary

• High-speed operation with a 15GHz transition frequency
• Low noise figure of 1.7dB at 2GHz
• Surface-mount SOT-343 package design

Applications

• High-frequency RF amplification circuits
• Low-noise amplifier (LNA) stages
• Microwave communication systems

Procurement Notes

Verify component authenticity through authorized channels due to potential availability constraints. Confirm RoHS compliance status prior to integration. Ensure storage conditions meet semiconductor handling standards to preserve electrical characteristics. Review datasheet specifications for thermal management requirements during assembly.

Selection Notes

Select this component for designs requiring high transition frequencies and minimal signal degradation. Compare noise figures against system sensitivity thresholds. Evaluate SOT-343 footprint compatibility with PCB layout constraints. Consider operating voltage limits relative to circuit biasing requirements.

Part Context

This part belongs to the RF Bipolar Transistor category from CEL. It serves as a discrete semiconductor solution for microwave and radio frequency applications. The product line focuses on silicon-based NPN structures optimized for high-frequency performance and low noise characteristics in compact packages.

Replacement Considerations

No public confirmed substitute part numbers are available.