2SC5751-T2-A

Overview

The CEL 2SC5751-T2-A is an NPN silicon RF bipolar transistor designed for high-frequency applications up to 15 GHz. It corresponds to the NEC NE677M04 part number and utilizes the M04 plastic SMD package (SOT-343F). Key electrical specifications include a typical transition frequency (fT) of 15 GHz, a noise figure of 1.7 dB, and a maximum available gain of 16 dB at 2 GHz. The device operates with a maximum collector-emitter voltage of 6 V and a maximum collector current of 50 mA.

Feature Summary

• Optimized for low-noise amplification in ultra-high frequency bands
• Utilizes silicon technology for stable RF performance
• Designed for compact surface-mount integration

Applications

• Low Noise Amplifiers (LNAs) for 2 to 8 GHz applications
• Front-end components for wireless connectivity systems
• ISM band applications including Wi-Fi and Bluetooth

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the M04 package code matches the required footprint. Check for end-of-life status or obsolescence notices from the manufacturer before finalizing design-in decisions.

Selection Notes

Select this component when a silicon NPN transistor with a 15 GHz transition frequency is required. Ensure the circuit design accommodates the 6 V maximum voltage rating and 50 mA current limit. Verify thermal management requirements for the small SOT-343F package under continuous operation.

Part Context

This part belongs to the Silicon Bipolar Transistors category within the CEL product portfolio. It serves as a discrete alternative to MMIC solutions for specific gain and noise requirements in the 2-8 GHz range. The M04 package allows for automated surface-mount assembly.

Replacement Considerations

The NE677M04 is listed as an alias part number. Verify pinout compatibility and electrical tolerances against any direct replacements. Consult official substitution guides for equivalent devices with matching fT and noise characteristics.