2SC5752-T1-A

Overview

The CEL 2SC5752-T1-A is an NPN silicon RF transistor designed for medium output power amplification. It operates within a frequency range of 800 MHz to 2.2 GHz, providing a typical small-signal gain of 14 dB at 900 MHz. The device delivers 60 mW of output power with a drain efficiency of 35% under standard test conditions. It features a low noise figure of 2.5 dB and a third-order intercept point (IP3) of 24 dBm. The component is housed in a compact 4-pin Super Minimold package, suitable for mobile communication applications.

Feature Summary

• Optimized for linear amplification in UHF-band wireless systems
• Integrated thermal stability for reliable high-power operation
• Compact surface-mount footprint for dense PCB layouts

Applications

• Base station front-end modules
• Wireless LAN infrastructure
• Mobile phone power amplifiers

Procurement Notes

Verify the specific suffix -T1 indicates tape and reel packaging when sourcing. Confirm the manufacturer origin, as this part was originally specified by NEC and later transferred to Renesas Technology Corp before being distributed by California Eastern Labs. Ensure the datasheet version matches the production batch for accurate S-parameter data.

Selection Notes

Select this component for applications requiring moderate output power with high linearity. Compare the 60 mW power capability against higher-power alternatives like the NESG270034 if greater output is needed. Consider the 4-pin package constraints versus the 3-pin Power Minimold options available in the same SiGe family for board space optimization.

Part Context

This transistor belongs to the NEC/Renesas SiGe RF transistor family, which includes variants like the NESG2101M16 and NESG240034. While similar in technology, the 2SC5752 is distinctively rated for 60 mW output, whereas other family members may offer lower noise or higher power levels. It serves as a silicon alternative to earlier GaAs devices in UHF bands.

Replacement Considerations

The NESG250134 is a related SiGe transistor but offers higher output power (800 mW). For direct pin-compatible replacement, verify the NESG250134-AZ datasheet. No identical 60 mW equivalent is listed in the provided reference data; design adjustments may be required for higher-power substitutes.