2SC5754-A

2SC5754-A

  • Description:RF TRANS NPN 5V 20GHZ
  • Series:-

SKU:a7b796284214 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 5V 20GHZ
  • Series:-
  • Mfr:CEL
  • Package:Strip
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5V
  • Frequency - Transition:20GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:12dB
  • Power - Max:735mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 100mA, 3V
  • Current - Collector (Ic) (Max):500mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-343F
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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2SC5754-A

Overview

The CEL 2SC5754-A is an NPN silicon RF transistor designed for medium output power amplification. It operates within the 460 MHz to 2.4 GHz frequency range and utilizes UHS0-HV technology with a transition frequency of 25 GHz. The device provides a typical saturated output power of 26.0 dBm at 1 dB compression point when biased at 3.6 V and driven with 15 dBm input power at 1.8 GHz. It achieves a high collector efficiency of 60% and is housed in a flat-lead 4-pin thin-type super minimold (M04) package.

Feature Summary

  • Designed for medium output power amplification across 460 MHz to 2.4 GHz
  • Utilizes UHS0-HV technology for high reliability and performance
  • Features gold electrodes for enhanced durability
  • Housed in a compact flat-lead 4-pin thin-type super minimold package

Applications

  • Medium output power amplification in wireless communication systems
  • RF front-end modules operating between 460 MHz and 2.4 GHz
  • Applications requiring high collector efficiency and reliable signal transmission

Procurement Notes

Verify the exact manufacturer designation and JEITA equivalent part number before procurement, as cross-manufacturer listings may exist. Confirm that the M04 package dimensions match your PCB footprint requirements. Ensure the component meets all necessary environmental compliance standards for your specific application region.

Selection Notes

Select this component for designs requiring medium output power amplification up to 2.4 GHz. Consider the 26.0 dBm P1dB specification and 60% collector efficiency for power-sensitive applications. Verify that the 3.6 V bias voltage aligns with your system's power supply constraints and that the M04 package fits your assembly layout.

Part Context

This component belongs to the Silicon Bipolar Transistors category from CEL, specifically listed under Single Transistors. It serves as an NPN silicon RF transistor optimized for medium output power amplification. The device is often referenced by its JEITA equivalent number, indicating its compatibility with established industry standards for similar RF amplification tasks.

Replacement Considerations

The NE664M04 is documented as a direct equivalent or alternative part number for the 2SC5754 series within CEL's portfolio. Designers should verify electrical parameter alignment, particularly regarding transition frequency and output power capabilities, when substituting this component.

2SC5754-A2SC5754-A

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