2SC5772FR-TL-E

Overview

The 2SC5772FR-TL-E is a silicon NPN epitaxial VHF/UHF wide band amplifier transistor manufactured by Renesas Electronics Corporation. Designed for high-frequency applications, this surface-mount device operates with a maximum collector current of 75mA and supports a maximum power dissipation of 700mW. The component features a minimum DC current gain (hFE) of 80 at a collector current of 20mA and a collector-emitter voltage of 5V. It is housed in a compact 3-MPAK package suitable for automated assembly.

Feature Summary

• Silicon NPN epitaxial construction optimized for VHF and UHF frequency ranges
• Wide band amplifier capability for high-frequency signal processing
• Surface-mount MPAK package design facilitating automated PCB integration

Applications

• UHF wide band amplifier circuits
• VHF radio frequency signal amplification
• High-frequency communication equipment front-ends

Procurement Notes

Verify the specific ordering suffix to ensure compliance with RoHS directives, as compliance status is determined by the orderable part number rather than the base part name. Confirm that the requested variant matches the required tape and reel specifications for production line compatibility. Cross-reference the datasheet revision to ensure alignment with current manufacturing standards and availability status before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring NPN amplification in the VHF or UHF spectrum with moderate power handling capabilities. The 700mW power rating and 75mA current limit define the operational boundaries for thermal management and biasing networks. Ensure the system architecture accommodates the 3-MPAK footprint and that the required hFE characteristics meet the minimum gain thresholds for the intended amplifier stage configuration.

Part Context

This transistor belongs to Renesas Electronics' portfolio of small-signal bipolar transistors engineered for high-frequency performance. The 2SC series designation indicates its classification within the company's standard discrete semiconductor lineup. As an epitaxial planar device, it offers improved switching characteristics and frequency response compared to older junction technologies, supporting modern RF infrastructure requirements.

Replacement Considerations

Consult official cross-reference documentation for direct substitutes. Verify pinout compatibility and electrical parameter equivalence, particularly regarding maximum voltage ratings and frequency response curves, before implementing any alternative components in existing designs.