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The 2SC5820WU-TL-E is a small signal NPN bipolar RF transistor designed for high-frequency amplifier applications. It operates at a maximum frequency of 20 GHz with a collector-emitter voltage of 4 V and a continuous collector current of 35 mA. The device dissipates 100 mW of power and is housed in a CMPAK-4 surface-mount package. It utilizes an embossed tape carrier type for automated assembly.
Verify the specific ordering suffix, as Renesas distinguishes between TL-E and TL-H variants. Confirm that the component remains orderable, noting that production status may change for certain grades. Ensure compatibility with the specified 8 mm emboss taping reel format for manufacturing integration.
Select this component for compact UHF amplifier designs requiring low power dissipation. The CMPAK-4 package suits space-constrained surface-mount layouts. Validate thermal management capabilities against the 100 mW limit during operation to ensure reliability within the specified voltage and current parameters.
This part belongs to Renesas' portfolio of small signal bipolar transistors intended for radio frequency applications. It serves as a specialized active component for signal conditioning in wireless communication systems operating in the ultra-high frequency range.
Public confirmed substitute part numbers are not available in the provided documentation. Consult Renesas sales or FAЕ teams for cross-reference information regarding alternative components.