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The 2SC5820WU-TL-H is a small-signal NPN bipolar RF transistor manufactured by Renesas Electronics Corporation. Designed for high-frequency amplifier applications, this component operates with a maximum collector current of 35mA and supports frequencies up to 20GHz. It features a maximum power dissipation of 100mW and a breakdown voltage of 4V. The device is housed in a CMPAK-4 surface-mount package, offering four leads for integration into compact electronic circuits.
Verify the specific ordering suffix and package type against official Renesas documentation to ensure compatibility with your design requirements. Confirm lead compliance status and tape carrier specifications during the sourcing process. Cross-reference the part number with the latest manufacturer datasheets to validate technical parameters and availability before finalizing procurement decisions.
Select this component for designs requiring small-signal NPN performance at UHF frequencies. Ensure the circuit layout accommodates the CMPAK-4 surface-mount footprint. Verify that the thermal management strategy supports the 100mW power dissipation limit. Confirm that the operating voltage remains within the 4V breakdown specification for reliable long-term operation.
This transistor belongs to the 2SC5820 series of small-signal bipolar transistors intended for high-frequency amplifier applications. The product line is primarily supported for customers who have already adopted these components. The specific model utilizes a CMPAK-4 package, distinguishing it from other variants in the family that may use different housing styles or pin configurations.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Renesas resources for potential alternatives.