2SC5824T100R

Single Bipolar Transistors Overview

The 2SC5824T100R is an NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 3 A. The device operates with a transition frequency (fT) of 200 MHz and exhibits a typical collector-emitter saturation voltage of 200 mV at IC = 2 A and IB = 200 mA. Power dissipation reaches 2.0 W when mounted on a ceramic board, with a maximum junction temperature of 150 °C. The component utilizes the MPT3 (SOT-89) surface-mount package.

Single Bipolar Transistors Feature Summary

• High-speed switching capability for rapid circuit transitions
• Low saturation voltage to minimize power loss during conduction
• Strong discharge power handling for inductive and capacitive loads

Single Bipolar Transistors Applications

• Low frequency amplifier circuits
• High speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'T100' against official documentation to confirm reel specifications and marking codes. Ensure that the selected variant matches the required DC current gain classification (Rank Q or R). Confirm compliance with RoHS directives and REACH regulations prior to procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current handling up to 3 A with fast switching speeds. Evaluate thermal management requirements carefully, as power dissipation varies significantly between reference land mounting and ceramic board configurations. Ensure base drive currents are sufficient to maintain low saturation voltages under load conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5824 series of power transistors designed for general-purpose electronic equipment. It serves as a complement to the 2SA2071 PNP counterpart within the same product family. The series is intended for use in standard consumer electronics, office automation, and telecommunications equipment.

Single Bipolar Transistors Replacement Considerations

The 2SC5964-TD-E from onsemi is documented as a similar replacement option with identical pinout and package configuration.

Single Bipolar Transistors FAQ

What is the typical collector-emitter saturation voltage?

The typical VCE(sat) is 200 mV when measured at a collector current of 2 A and a base current of 200 mA.

How does mounting affect power dissipation?

Power dissipation is rated at 0.5 W when each terminal is mounted on a reference land, and increases to 2.0 W when mounted on a ceramic board measuring 40x40x0.7 mm.

What are the switching time characteristics?

At IC = 3 A, the turn-on time is typically 50 ns, storage time is 150 ns, and fall time is 30 ns.