2SC5865TLQ

Single Bipolar Transistors Overview

The ROHM 2SC5865TLQ is an NPN silicon epitaxial planar transistor designed for high voltage discharge and high-speed switching applications. It features a collector-emitter breakdown voltage of 60V, a continuous collector current rating of 1A, and a power dissipation capacity of 500mW at 25°C. The device utilizes a TSMT3 surface-mount package with a typical transition frequency (fT) of 250MHz. Key electrical characteristics include a low saturation voltage of approximately 200mV at 500mA and a fall time of 50ns at 1.0A.

Single Bipolar Transistors Feature Summary

• High speed switching capability with fast turn-on and fall times suitable for demanding circuit requirements.
• Low saturation voltage design to minimize power loss during conduction states.
• Strong discharge power handling for inductive and capacitive loads.
• Low noise performance optimized for sensitive signal processing.

Single Bipolar Transistors Applications

• High speed switching circuits
• Low noise amplification stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TLQ' against the manufacturer's official documentation to confirm packaging details and availability status. Ensure that the component meets all required environmental standards and RoHS compliance specifications before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with rapid switching speeds and low saturation voltage is required. Consider its 60V rating and 1A current capacity for general-purpose switching tasks. Verify thermal management requirements as the device dissipates up to 500mW.

Single Bipolar Transistors Part Context

This component belongs to ROHM's lineup of high-performance bipolar junction transistors. It serves as a complementary counterpart to the 2SA2092 PNP transistor, facilitating push-pull configurations in amplifier and driver circuits. The device is engineered for reliability in consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

The 2SA2092 is documented as a complementary type. No direct substitute part numbers are provided in the source material.

Single Bipolar Transistors FAQ

What is the typical fall time of the 2SC5865?

The typical fall time is 50ns when measured at a collector current of 1.0A.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter breakdown voltage (BVCEO) is 60V.

Does this transistor support high voltage discharge?

Yes, the datasheet explicitly lists high voltage discharge capability as a primary feature.