2SC5865TLR

Single Bipolar Transistors Overview

The ROHM 2SC5865TLR is an NPN silicon epitaxial planar transistor designed for high voltage discharge and high speed switching applications. It features a low noise profile with a collector-emitter breakdown voltage of 60V and a continuous collector current rating of 1.0A. The device offers a typical transition frequency (fT) of 250 MHz and a maximum power dissipation of 500 mW at 25°C ambient temperature. Packaged in the TSMT3 surface-mount format, it provides strong discharge power for inductive and capacitive loads.

Single Bipolar Transistors Feature Summary

• High speed switching capability with a typical fall time of 50ns at 1.0A collector current.
• Low saturation voltage, typically 200mV at IC=500mA and IB=50mA.
• Strong discharge power suitable for driving inductive and capacitive loads.
• Low noise characteristics optimized for sensitive signal processing.

Single Bipolar Transistors Applications

• High speed switching circuits
• Low noise amplification stages
• Inductive load drivers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TLR' against the manufacturer's official documentation to confirm tape and reel packaging specifications. Ensure the component meets RoHS compliance requirements as stated in the datasheet. Confirm that the TSMT3 package dimensions align with your PCB footprint design before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a low noise NPN transistor with high speed switching capabilities is required. It serves as a complementary match to the 2SA2092 PNP transistor. Consider its 60V breakdown voltage and 1.0A current rating for general purpose amplification or switching tasks where low saturation voltage is beneficial.

Single Bipolar Transistors Part Context

This part belongs to ROHM's lineup of bipolar junction transistors engineered for efficiency and reliability. The 2SC5865 is specifically characterized by its ability to handle high voltage discharge while maintaining low noise performance. It utilizes a silicon epitaxial planar structure within a compact TSMT3 package suitable for automated surface mount assembly processes.

Single Bipolar Transistors Replacement Considerations

The 2SA2092 is documented as a complementary type. Verify pinout compatibility and electrical ratings before substituting with other NPN transistors offering similar 60V and 1.0A specifications.

Single Bipolar Transistors FAQ

What is the typical fall time for the 2SC5865?

The typical fall time is 50ns when measured at a collector current of 1.0A.

Is the 2SC5865 suitable for inductive load driving?

Yes, the datasheet specifies that it possesses strong discharge power for both inductive and capacitive loads.

What is the DC current gain range for this transistor?

The DC current gain (hFE) ranges from 120 to 390 under standard test conditions.